出访报告 | 一、 访问情况： 应IEEE International Electron Device Meeting （IEDM）组委会邀请，计划于2019年11月6日至2018年12月12日赴美国旧金山参加IEEE International Electron Device Meeting (IEDM)。在外共停留8天。 二、访问成果 IEDM is the world's preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.
Our laboratory has one paper, entitled Programmable Linear RAM: A New Flash Memory-based Memristor for Artificial Synapses and Its Application to Speech Recognition System, at IEEE International Electron Devices Meeting (IEDM) in San Francisco. I've discussed our research achievements and exchanged the technical opinions with other experts and professors in the world. We will try to make technological breakthoughs again next year.
三、工作建议 N/A |