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李尔平教授学术报告会

编辑:xdx 日期:2010-05-17 访问次数:3412
517(周一)下午2:00李尔平教授将在玉泉校区行政楼208会议室进行学术报告,欢迎各位老师和同学们参加。
 
Title: Electromagnetic Issues in  3D Integrated Circuits

Erping Li, PhD, IEEE Fellow
Dept of Information SCience and Electronic Engineering, Zhejiang University

Abstract:

The rapid growth and convergence of digital computing and wireless communications have been driving semiconductor technology to continue its evolution following Moore’s law in today’s nanometer regime. Modern electronic systems integrate more complex components and devices which results in a very complex electromagnetic field environment.  Electromagnetic compatibility (EMC) has become one of the major issues in printed circuit board (PCB) and integrated circuit (IC) design.

The downsizing of  semiconductor devices however suffers significant technical and business challenges. The new TSV (Through Silicon Via) based 3D IC technology is emerging as a promising next generation IC technology in both semiconductor industry and academia. In the 3D IC, very thin semiconductor dies of less than 30 um are vertical stacked to minimize the package size and to maximize the semiconductor system performances. In the 3D IC, TSV is becoming the most critical vertical interconnection structure between the semiconductor dies. Around world, most of the semiconductor companies including Intel, IBM, TI, AMD and Qualcomm are seriously considering the TSV based 3D IC as a future direction of the semiconductor integration technology.

In the TSV based 3D IC, the  electromagnetic characteristics including signal integrity, power integrity and EMC are  becoming the major design obstacle due to the high frequency loss, coupling, and electromagnetic radiation, while more than thousand of vertical and lateral interconnections are routed in a tiny 3D space. It could be even more serious in 3D IC for the applications of high-density and multi-function mobile multimedia, computing, and communication system platforms. In this talk, new modeling, measurement, design, and analysis approaches will be introduced in order to enhance the performance and reliability of the 3D IC.