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题目：GaAs HBT MMIC Power Amplifier Design
时间：2010.7.24下午2：30-4：00
地点：微电子楼103会议室
报告人：文忠民 博士
专家介绍
Dr Wen graduated from Wireless Telecommunication Deptment, Nanjing University of Posts and Telecommunication. In 1978, received M. S. degree from Huazhong Univesity of Science and Technology in 1982, and received Ph. D. in Engineering, University of Tsukuba, Japan in 1991.Between 1992 and 1995, he was involved in a Japan’s national research project in Japan. From 1996 to now, he has been working on design of GaAs MMICs and modules for application of microwave, millimeter wave and optical communication as a designer (or design manager) in Japan, Singapore, Taiwan and US. Currently he is a Sr. Staff RF Design Engineer and Project Manager of Microchip in LA.
Dr. Wen is a Sr. Member of the IEEE, MTT-S, US and Oversea Member of the IEICE, Japan, and the major author of more than 7 US and 5 JP patents and more than 20 publications of International Journals and Conferences.
报告内容
How to design a commercial power amplifier for modern wireless communication application is talked based on my experience. First, a fundamental study is introduced. This includes GaAs HBT device structure, layout rules, component models from industrial process foundries and typical bias and matching circuits. Then simulation approaches are described. The approaches include DC, S parameters, stability, nonlinearity and Intermodulation distortion. Finally, some interesting topics relating to MMIC power amplifiers are discussed for study. These topics are intermodulation cancellation, spur and subharmonic issue, and Doherty power amplifier applied for mobile use.
