Recently, the IEEE International Reliability Physics Symposium (IRPs) announced the award-winning papers in 2020. The research on self-heating effect of ultra-small size FinFET devices published by Prof.Zhao Yi of ISEE, ZJU won the Best Paper Award. The first author of this paper is QU Yiming, a Ph.D. student. This is the very first time that a research achievement from China has won this honor, and it is also a rare achievement with students being the first author to win this award in recent years.
For 59 years, IRPs has been the first international conference for engineers and scientists to demonstrate their original work in the field of integrated circuit reliability, attracting participants from the United States, Europe, Asia and other parts of the world to understand the reliability of semiconductor devices, integrated circuits and microelectronic systems through the analysis of FailurP physics and application environment.
Based on the research results published in IEDM of 2017, Professor ZHAO’s team deeply developed an ultra-fast sub nanosecond test system. For the first time in the world, the in-situ dynamic monitoring of self-heating effect of advanced FinFET devices working at circuit speed was carried out, and the extracted transient temperature was applied to device reliability degradation behavior in the process of evaluation and model establishment. Self-heating effect has become the most serious and concerned reliability problem in sub-10nm IC technology nodes. It is not only of great significance for device research and development, but also provides reference for circuit designers when designing circuit clock and device layout.
Since entering the University, QU Yiming, has taken the lead in the research of ultra-fast testing technology for devices in the group. Without sufficient theoretical guidance and references, he overcame many difficulties and made numerous breakthroughs. He has presented his achievements at well-known international conferences such as IEDM / IRPs. And at present, Zhejiang University has taken the leading part in the field of ultra-fast testing.
Figure 1 Award link: https://irps.org/wp-content/uploads/sites/15/2020/08/IRPS_ News1.pdf
Fig. 2 channel temperature changes of FinFET obtained by in situ real-time monitoring under AC signals with different circuit speeds
