Contents and Syllabus of the course
First quarter cover p-n junctions, heterojunctions, HBTs, FETs and MOSFETs operating under DC conditions. Here drift diffusion analysis and thermionic emission will be employed to describe current flow. In the next quarter, it is suggested that the Boltzmann transport analysis contained in the Appendix be covered and the basis for the drift-diffusion formalism explained. Next the methodology for deriving the high frequency properties of devices such as HBTs and FETs along with their equivalent circuits is covered. Lastly, High Electron Mobility Transistors and Gallium Nitride based devices may be covered
Part 1
Lecture 1: Shockley-Read-Hall analysis of lifetime (this introduces the concept of lifetime essentialfor p-n junction analysis)
Lecture 2: p-n junction electrostatics, p-n junction transport (Forward)
Lecture 3: p-n junction transport (Reverse) and Applications
Lecture 4: Schottky barrier electrostatics and current transport
Lecture 5: Graded materials, Quasi-fields and heterojuncions
Lecture 6: HBTs, Generalized Moll-Ross relationship Early effect, Kirk effect(quick description)
Lecture 7: FETs and gradual channel analysis
Lecture 8: High Aspect Ratio design analysis
Lecture 9: MOS Capacitor and MOSFETs
Lecture 10: Non-ideal effects
Part 2
Lecture 1 and 2: Boltzmann Transport Equation and consequences (Drift Diffusion Equation
derivation, relaxation times)
Lecutre 3: Charge Control Model (Description and application to HBTs)
Lecutre 4: Ramo-Shockley Theorem and the Kirk effect
Lecutre 5: High Frequency properties of HBTs
Lecutre 6: Equivalenbt Circuit derivation of HBTs; Figures of Merit
Lecutre 7: HEMTs; Electrostatics
Lecutre 8: Gallium Nitride; Polarization and device design
Lecutre 9: HEMTs; I-V characteristics, Design Issues
Lecutre 10: HEMTs and FETs; High Frequency Performance
Reference:
Vost, Clifton,《microelectronic devices and circuits》2006 Edition
Howe, Roger, Charles《microelectronics》1996 edition
Robert F. Pierret《Semiconductor Device Fundamentals》2008 edition
Introduction
Dr. Khurram Shehzad obtained his Ph.D. in Materials Science and Engineering (with focus on electronic materials) from Beijing University of Chemical Technology, Beijing, China. From 2011-2013, he was a Postdoctoral Research Fellow at the Center for Nano and Micro Mechanics, Tsinghua University, Beijing, China. He was a Postdoctoral Fellow at the College of Information Science and Electronics, Zhejiang University, China, from 2014-2017. Currently, he is a faculty member at College of Information Science and Electronics, Zhejiang University, China. Dr. Khurram has a strong background of Chemistry, Physics, and Materials Science/Engineering which makes him a perfect choice for advanced multidisciplinary teaching/research. He has taught course on Microelectroncis Device Physics at both grad and undergrad level. He is the recipient of several awards including International Young Scientist Fellowship from NSF China, Nanchang University Fellowship, CAS President Fellowship, and the Cultural Exchange Fellowship. His current research interests include hetero-structures and the macro-assemblies of two-dimensional materials for their applications in energy, healthcare, and electronics.